FZ800R33KL2CNOSA1
IGBT MOD 3300V 1500A 9800WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies FZ800R33KL2CNOSA1 is a high-power Insulated Gate Bipolar Transistor (IGBT) module designed for demanding applications. This chassis mount module features a substantial 3300V collector-emitter breakdown voltage and a maximum collector current of 1500A, with a power dissipation rating of 9800W. The device exhibits a typical Vce(on) of 3.65V at 15V gate-emitter voltage and 800A collector current. Input capacitance (Cies) is specified at 97 nF at 25V. Operating temperature ranges from -40°C to 125°C (TJ). This component is commonly utilized in industrial motor drives, electric traction, and power generation systems where robust high-voltage switching is critical. The FZ800R33KL2CNOSA1 is supplied in tray packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3.65V @ 15V, 800A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 1500 A |
| Voltage - Collector Emitter Breakdown (Max) | 3300 V |
| Power - Max | 9800 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 97 nF @ 25 V |
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