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FZ800R33KF2CS1NDSA1

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FZ800R33KF2CS1NDSA1

IGBT MODULE 3300V 1A 9600W

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies IGBT Module FZ800R33KF2CS1NDSA1 is a high-power half-bridge configuration designed for demanding applications. This module features a robust 3300V collector-emitter breakdown voltage and a continuous collector current rating of 1A, with a maximum power dissipation of 9600W. The module is chassis mountable for efficient thermal management. Key parameters include a Vce(on) of 4.25V at 15V Vge and 800A, and an input capacitance (Cies) of 100nF at 25V. Operating temperature ranges from -40°C to 125°C. This component is typically utilized in high-voltage power conversion systems, renewable energy infrastructure, and industrial motor drives.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationHalf Bridge
Operating Temperature-40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic4.25V @ 15V, 800A
NTC ThermistorNo
Supplier Device Package-
IGBT Type-
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)3300 V
Power - Max9600 W
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce100 nF @ 25 V

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