FZ800R33KF2CNOSA2
IGBT MODULE 3300V 1A 9600WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies FZ800R33KF2CNOSA2 is an IGBT module with a half-bridge configuration. This module is designed for high-voltage applications, featuring a collector-emitter breakdown voltage of 3300 V and a maximum collector current of 1 A. The component's power dissipation capability is rated at 9600 W, and it offers a Vce(on) of 4.25V at 15V gate-emitter voltage and 800A collector current. The module is chassis mountable and operates within a temperature range of -40°C to 125°C. Input capacitance (Cies) is specified at 100 nF at 25 V. This component is suitable for use in demanding industrial applications such as motor drives and power conversion systems. It is supplied in tray packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 4.25V @ 15V, 800A |
| NTC Thermistor | No |
| Supplier Device Package | - |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 3300 V |
| Power - Max | 9600 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 100 nF @ 25 V |
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