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FZ800R33KF2CNOSA1

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FZ800R33KF2CNOSA1

IGBT MOD 3300V 1300A 9600W

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies FZ800R33KF2CNOSA1 is a high-power IGBT module featuring a half-bridge configuration. This chassis mount module is rated for a collector-emitter voltage of 3300 V and a continuous collector current of 1300 A. It offers a maximum power dissipation of 9600 W. The Vce(on) is specified at 4.25 V at 15 V gate-emitter voltage and 800 A collector current. Input capacitance (Cies) is 100 nF at 25 V. Operating temperature ranges from -40°C to 125°C. This component is suitable for demanding applications in industrial power conversion, motor drives, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationHalf Bridge
Operating Temperature-40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic4.25V @ 15V, 800A
NTC ThermistorNo
Supplier Device PackageModule
IGBT Type-
Current - Collector (Ic) (Max)1300 A
Voltage - Collector Emitter Breakdown (Max)3300 V
Power - Max9600 W
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce100 nF @ 25 V

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