FZ800R33KF2CB3S2NDSA1
IGBT MODULE 3300V 1A 9600WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies FZ800R33KF2CB3S2NDSA1 is a high-power IGBT module featuring a half-bridge configuration. This component is rated for a collector-emitter breakdown voltage of 3300 V and a maximum continuous collector current of 1 A, with a peak output power capability of 9600 W. The module exhibits a Vce(on) of 4.25V at 15V gate-emitter voltage and 800A collector current. It is designed for chassis mounting and operates across a temperature range of -40°C to 125°C. Applications for this device include high-voltage power conversion, industrial motor drives, and renewable energy systems. The module is supplied in tray packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 4.25V @ 15V, 800A |
| NTC Thermistor | No |
| Supplier Device Package | - |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 3300 V |
| Power - Max | 9600 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 100 nF @ 25 V |
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