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FZ800R12KS4B2NOSA1

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FZ800R12KS4B2NOSA1

IGBT MOD 1200V 1200A 7600W

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies FZ800R12KS4B2NOSA1 is a single IGBT Module designed for demanding power applications. This chassis mount module offers a robust 1200 V collector-emitter breakdown voltage and a maximum collector current of 1200 A, supporting a power dissipation of 7600 W. Featuring a standard input and a Vce(on) of 3.7V at 15V gate-emitter voltage and 800A collector current, it ensures efficient switching performance. The module has an input capacitance (Cies) of 52 nF at 25 V and an operating temperature range of -40°C to 125°C. It is supplied in Tray packaging. This component is commonly utilized in industrial motor drives, renewable energy systems, and power factor correction circuits.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 800A
NTC ThermistorNo
Supplier Device PackageModule
IGBT Type-
Current - Collector (Ic) (Max)1200 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max7600 W
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce52 nF @ 25 V

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