FZ750R65KE3P2NOSA1
IHV IHM TManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies FZ750R65KE3P2NOSA1 is a Trench Field Stop IGBT module configured as a single switch. This component offers a high breakdown voltage of 6.5 kV and a continuous collector current capability of 750 A, with a maximum power rating of 3 MW. The module features a low collector-emitter saturation voltage of 3.4V at 15V Vge and 750A Ic. Input capacitance (Cies) is rated at 205000 pF at 25V. Designed for chassis mounting, this IGBT module operates within a temperature range of -50°C to 125°C. It finds application in high-power industrial systems, electric traction, and renewable energy generation. The supplier device package is A-IHV190-6.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single Switch |
| Operating Temperature | -50°C ~ 125°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 750A |
| NTC Thermistor | No |
| Supplier Device Package | A-IHV190-6 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 750 A |
| Voltage - Collector Emitter Breakdown (Max) | 6.5 kV |
| Power - Max | 3 MW |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 205000 pF @ 25 V |
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