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FZ750R65KE3NOSA1

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FZ750R65KE3NOSA1

IGBT MOD 6500V 750A A-IHV190-6

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies FZ750R65KE3NOSA1 is a high-power IGBT module designed for demanding applications. This single-configuration module features a robust 6500 V collector-emitter voltage rating and a substantial 750 A continuous collector current capability. With a maximum power dissipation of 14500 W and a low on-state voltage of 3.4V at 15V gate-emitter voltage and 750A collector current, it ensures efficient power handling. The module's input capacitance is rated at 205 nF at 25V. Engineered for chassis mounting, it operates reliably within an extended temperature range of -50°C to 125°C. This component is frequently utilized in industrial power conversion, motor drives, and power grid applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 750A
NTC ThermistorNo
Supplier Device PackageModule
IGBT Type-
Current - Collector (Ic) (Max)750 A
Voltage - Collector Emitter Breakdown (Max)6500 V
Power - Max14500 W
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce205 nF @ 25 V

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