FZ400R65KE3NOSA1
IGBT MOD 6500V 800A 8350WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies FZ400R65KE3NOSA1 is a high-power IGBT module featuring a half-bridge configuration. This module is rated for a collector-emitter breakdown voltage of 6500 V and a continuous collector current of 800 A. The maximum power dissipation is 8350 W. Key electrical characteristics include a maximum collector-emitter saturation voltage (Vce(on)) of 3.4 V at 15 V gate-emitter voltage and 400 A collector current. The input capacitance (Cies) is 110 nF at 25 V. Designed for chassis mounting, this module operates within an ambient temperature range of -50°C to 125°C. It finds application in demanding sectors such as industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -50°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 400A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 800 A |
| Voltage - Collector Emitter Breakdown (Max) | 6500 V |
| Power - Max | 8350 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 110 nF @ 25 V |
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