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FZ1200R33KL2CNOSA1

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FZ1200R33KL2CNOSA1

IGBT MODULE 3300V 2300A

Manufacturer: Infineon Technologies

Categories: IGBT Modules

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Infineon Technologies FZ1200R33KL2CNOSA1 is a high-power IGBT module designed for demanding applications. This module offers a robust 3300 V collector-emitter breakdown voltage and a substantial 2300 A continuous collector current, enabling power handling up to 14500 W. Featuring a standard input configuration and a collector-emitter saturation voltage (Vce(on)) of 3.65 V at 15 V gate-emitter voltage and 1200 A collector current, it provides efficient power switching. The input capacitance (Cies) is rated at 145 nF at 25 V. Constructed for chassis mounting, this module operates reliably across a temperature range of -40°C to 125°C. Applications for this component are found in high-voltage power systems, electric traction, and industrial motor drives. The FZ1200R33KL2CNOSA1 is supplied in tray packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
Operating Temperature-40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic3.65V @ 15V, 1200A
NTC ThermistorNo
Supplier Device PackageModule
IGBT Type-
Current - Collector (Ic) (Max)2300 A
Voltage - Collector Emitter Breakdown (Max)3300 V
Power - Max14500 W
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce145 nF @ 25 V

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