FZ1200R33KF2CNOSA4
IGBT MODULE 3300V 2000AManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies FZ1200R33KF2CNOSA4 is a full-bridge IGBT module designed for high-power applications. This component offers a 3300 V collector-emitter breakdown voltage and a maximum collector current of 2000 A. With a power dissipation rating of 14500 W, it is suited for demanding environments. The module features a chassis mount design for robust thermal management. Key electrical characteristics include a typical Vce(on) of 4.25V at 15V gate-emitter voltage and 1.2 kA collector current. Input capacitance (Cies) is specified at 150 nF at 25 V. The operating temperature range is from -40°C to 125°C. This Infineon Technologies IGBT module is utilized in industries such as industrial motor drives, renewable energy systems, and power grid applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Full Bridge |
| Operating Temperature | -40°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 4.25V @ 15V, 1.2kA |
| NTC Thermistor | No |
| Supplier Device Package | - |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 2000 A |
| Voltage - Collector Emitter Breakdown (Max) | 3300 V |
| Power - Max | 14500 W |
| Current - Collector Cutoff (Max) | 12 mA |
| Input Capacitance (Cies) @ Vce | 150 nF @ 25 V |