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FZ1200R33KF2CNOSA1

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FZ1200R33KF2CNOSA1

IGBT MODULE 3300V 2000A

Manufacturer: Infineon Technologies

Categories: IGBT Modules

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The Infineon Technologies IGBT Module, part number FZ1200R33KF2CNOSA1, is a high-power full bridge configuration module designed for demanding applications. This component offers a robust 3300 V collector-emitter breakdown voltage and a maximum collector current of 2000 A, with a power dissipation capability of 14500 W. Featuring a chassis mount for efficient thermal management, it operates within an industrial temperature range of -40°C to 125°C. The module's input capacitance is specified at 150 nF at 25 V, and the Vce(on) is a maximum of 4.25V at 15V and 1200A. This device is a critical component in high-voltage power conversion systems across industries such as renewable energy, industrial motor drives, and electric vehicle powertrains.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationFull Bridge
Operating Temperature-40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic4.25V @ 15V, 1200A
NTC ThermistorNo
Supplier Device PackageModule
IGBT Type-
Current - Collector (Ic) (Max)2000 A
Voltage - Collector Emitter Breakdown (Max)3300 V
Power - Max14500 W
Current - Collector Cutoff (Max)12 mA
Input Capacitance (Cies) @ Vce150 nF @ 25 V

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