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FZ1200R33KF2CB3S2NDSA1

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FZ1200R33KF2CB3S2NDSA1

IGBT MODULE 3300V 2000A

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies FZ1200R33KF2CB3S2NDSA1 is a full-bridge IGBT module designed for high-power applications. This module features a 3300 V collector-emitter breakdown voltage and a continuous collector current rating of 2000 A, with a maximum power dissipation of 14500 W. The module utilizes a chassis mount for efficient thermal management. Key electrical characteristics include a typical Vce(on) of 4.25 V at 15 V gate-emitter voltage and 1.2 kA collector current, and an input capacitance (Cies) of 150 nF at 25 V. The operating temperature range is from -40°C to 125°C. This component is commonly found in industrial motor drives, power grid applications, and renewable energy systems. It is supplied in tray packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationFull Bridge
Operating Temperature-40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic4.25V @ 15V, 1.2kA
NTC ThermistorNo
Supplier Device Package-
IGBT Type-
Current - Collector (Ic) (Max)2000 A
Voltage - Collector Emitter Breakdown (Max)3300 V
Power - Max14500 W
Current - Collector Cutoff (Max)12 mA
Input Capacitance (Cies) @ Vce150 nF @ 25 V

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