Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

FZ1200R33KF2CB3S2NDSA1

Banner
productimage

FZ1200R33KF2CB3S2NDSA1

IGBT MODULE 3300V 2000A

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies FZ1200R33KF2CB3S2NDSA1 is a full-bridge IGBT module designed for high-power applications. This module features a 3300 V collector-emitter breakdown voltage and a continuous collector current rating of 2000 A, with a maximum power dissipation of 14500 W. The module utilizes a chassis mount for efficient thermal management. Key electrical characteristics include a typical Vce(on) of 4.25 V at 15 V gate-emitter voltage and 1.2 kA collector current, and an input capacitance (Cies) of 150 nF at 25 V. The operating temperature range is from -40°C to 125°C. This component is commonly found in industrial motor drives, power grid applications, and renewable energy systems. It is supplied in tray packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationFull Bridge
Operating Temperature-40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic4.25V @ 15V, 1.2kA
NTC ThermistorNo
Supplier Device Package-
IGBT Type-
Current - Collector (Ic) (Max)2000 A
Voltage - Collector Emitter Breakdown (Max)3300 V
Power - Max14500 W
Current - Collector Cutoff (Max)12 mA
Input Capacitance (Cies) @ Vce150 nF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BSM400GA170DLS

IGBT MODULE

product image
F3L225R12W3H3B11BPSA1

IGBT MODULE

product image
F43L50R07W2H3FB11BPSA2

IGBT MOD 650V 50A 20MW