Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

FZ1200R17KE3B2NOSA1

Banner
productimage

FZ1200R17KE3B2NOSA1

IGBT MODULE 1700V 1200A

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies FZ1200R17KE3B2NOSA1 is a high-power IGBT Module from the IHM-B series. This single-switch module features a robust 1700 V breakdown voltage and a continuous collector current capability of 1900 A, with a peak current of 1.2 kA at a Vce(on) of 2.45V. The module dissipates up to 8950 W and is designed for chassis mounting. Key parameters include an input capacitance (Cies) of 110 nF at 25 V and an operating temperature range of -40°C to 125°C. This component is suitable for demanding applications in industrial power conversion, renewable energy systems, and electric vehicle powertrains.

Additional Information

Series: IHM-BRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle Switch
Operating Temperature-40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 1.2kA
NTC ThermistorNo
Supplier Device Package-
IGBT Type-
Current - Collector (Ic) (Max)1900 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Power - Max8950 W
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce110 nF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy