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FZ1200R17HP4B2BOSA2

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FZ1200R17HP4B2BOSA2

IGBT MOD 1700V 1200A 7800W

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies FZ1200R17HP4B2BOSA2 is a Trench Field Stop IGBT module from the IHM-B series. This Half Bridge configuration features a maximum collector current of 1200 A and a collector-emitter breakdown voltage of 1700 V. The module offers a maximum power dissipation of 7800 W and a low on-state voltage (Vce(on)) of 2.25V at 15V gate-emitter voltage and 1200 A collector current. Input capacitance (Cies) is specified at 97 nF at 25 V. Designed for chassis mounting, this component operates within a temperature range of -40°C to 150°C. It is commonly utilized in industrial applications such as motor drives, power supplies, and renewable energy systems.

Additional Information

Series: IHM-BRoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationHalf Bridge
Operating Temperature-40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic2.25V @ 15V, 1200A
NTC ThermistorNo
Supplier Device PackageModule
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)1200 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Power - Max7800 W
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce97 nF @ 25 V

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