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FZ1000R33HE3C1NOSA1

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FZ1000R33HE3C1NOSA1

IHV IHM T XHP 3 3-6 5K

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies FZ1000R33HE3C1NOSA1 is a high-power IGBT module from the IHM-B series, featuring a Trench Field Stop IGBT technology. This single-switch configuration offers a robust solution with a maximum collector current of 1000 A and a collector-emitter breakdown voltage of 3300 V. The module is rated for a maximum power dissipation of 1,600,000 W and exhibits a low on-state voltage (Vce(on)) of 3.1V at 15V gate-emitter voltage and 1kA collector current. Designed for chassis mounting, it operates within an extended temperature range of -40°C to 150°C (TJ). This component is typically utilized in demanding industrial applications such as high-power motor drives, renewable energy inverters, and electric vehicle powertrains. Its AG-IHVB130-3 package and Tray packaging ensure efficient handling and integration into advanced power systems.

Additional Information

Series: IHM-BRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle Switch
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic3.1V @ 15V, 1kA
NTC ThermistorNo
Supplier Device PackageAG-IHVB130-3
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)1000 A
Voltage - Collector Emitter Breakdown (Max)3300 V
Power - Max1600000 W
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce190 nF @ 25 V

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