FS100R12KS4BOSA1
IGBT MOD 1200V 130A 660WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies FS100R12KS4BOSA1 is a three-phase inverter IGBT module designed for high-power applications. This module features a robust 1200 V collector-emitter breakdown voltage and a maximum continuous collector current of 130 A. The FS100R12KS4BOSA1 offers a power dissipation capability of 660 W and a Vce(on) of 3.7V at 15V gate-emitter voltage and 100A collector current. With an input capacitance (Cies) of 6.8 nF at 25 V, it ensures efficient switching characteristics. The module supports a standard input and is rated for operation across a wide temperature range of -40°C to 125°C. Its chassis mount design facilitates thermal management in demanding environments. This component is widely utilized in industrial automation, renewable energy systems, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Three Phase Inverter |
| Operating Temperature | -40°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 100A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 130 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 660 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 6.8 nF @ 25 V |
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