Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

FP50R12KT4B11BOSA1

Banner
productimage

FP50R12KT4B11BOSA1

IGBT MOD 1200V 50A 280W

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies EconoPIM™ 2 FP50R12KT4B11BOSA1 is a robust IGBT module designed for three-phase inverter applications. This chassis mount module features Trench Field Stop IGBT technology, providing a high breakdown voltage of 1200 V and a continuous collector current capability of 50 A. With a maximum power dissipation of 280 W and a low on-state voltage (Vce(on)) of 2.15 V at 15 V gate-emitter voltage and 50 A collector current, it ensures efficient power conversion. The module includes an integrated NTC thermistor for thermal monitoring and operates across a wide temperature range of -40°C to 150°C. This component is suitable for use in industrial automation, renewable energy systems, and electric vehicle powertrains.

Additional Information

Series: EconoPIM™ 2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationThree Phase Inverter
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 50A
NTC ThermistorYes
Supplier Device PackageModule
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max280 W
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce2.8 nF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
FP25R12KT4B15BOSA1

IGBT MOD 1200V 25A 160W

product image
FP50R12KT4PB11BPSA1

MOD IGBT LOW PWR ECONO2-4

product image
FP40R12KE3BOSA1

IGBT MOD 1200V 55A 210W