FP50R07N2E4BOSA1
IGBT MODULE 650V 70AManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies' FP50R07N2E4BOSA1 is an EconoPIM™ 2 series IGBT module designed for three-phase inverter applications. This chassis mount module features a 650V collector-emitter breakdown voltage and a maximum collector current of 70A. The IGBT technology utilizes Trench Field Stop construction, offering optimized performance. Key electrical characteristics include a typical Vce(on) of 1.95V at 15V Vge and 50A Ic, and an input capacitance (Cies) of 3.1 nF at 25V. An integrated NTC thermistor is included for temperature monitoring. The operating temperature range is -40°C to 150°C. This component is commonly employed in industrial automation, renewable energy systems, and electric vehicle powertrains.
Additional Information
Series: EconoPIM™ 2RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Three Phase Inverter |
| Operating Temperature | -40°C ~ 150°C |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 50A |
| NTC Thermistor | Yes |
| Supplier Device Package | Module |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 3.1 nF @ 25 V |
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