FF800R17KE3NOSA1
IGBT MODULE 1700V 4450WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies FF800R17KE3NOSA1 is a high-performance IGBT module designed for demanding applications. This module features two independent IGBTs with a collector-emitter voltage breakdown of 1700 V and a maximum power dissipation of 4450 W. The IGBTs offer a low on-state voltage (Vce(on)) of 2.45V at 15V gate-emitter voltage and 800A collector current, ensuring efficient power transfer. With a collector cutoff current (Ic) of 5 mA and input capacitance (Cies) of 72 nF at 25 V, it is suitable for various power conversion topologies. The module utilizes a chassis mount design for robust thermal management and operates reliably across a wide temperature range from -40°C to 125°C. This component finds use in industrial drives, renewable energy systems, and high-power motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Not For New DesignsPackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | 2 Independent |
| Operating Temperature | -40°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 800A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Power - Max | 4450 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 72 nF @ 25 V |
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