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FF800R17KE3B2NOSA1

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FF800R17KE3B2NOSA1

IGBT MODULE 1700V 800A

Manufacturer: Infineon Technologies

Categories: IGBT Modules

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Infineon Technologies IGBT Module FF800R17KE3B2NOSA1 from the IHM-B series. This module features 2 independent IGBTs with a maximum collector-emitter voltage of 1700 V. It offers a continuous collector current (Ic) capability of 1200 A and a maximum power dissipation of 5200 W. The module utilizes a standard input and has a Vce(on) of 2.45V at 15V gate-emitter voltage and 800A collector current. Input capacitance (Cies) is 72 nF at 25 V. Designed for chassis mounting, this component operates within an ambient temperature range of -40°C to 125°C. Its robust construction and high power handling make it suitable for applications in industrial motor drives and renewable energy systems.

Additional Information

Series: IHM-BRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
Configuration2 Independent
Operating Temperature-40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 800A
NTC ThermistorNo
Supplier Device PackageA-IHV130-3
IGBT Type-
Current - Collector (Ic) (Max)1200 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Power - Max5200 W
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce72 nF @ 25 V

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