FF800R12KE3NOSA1
IGBT MOD 1200V 1200A 3900WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies FF800R12KE3NOSA1 is a high-power IGBT module featuring a single configuration. This module is rated for a collector-emitter voltage of 1200 V and a continuous collector current of 1200 A, with a maximum power dissipation of 3900 W. The Vce(on) is specified at 2.15 V at 15 V gate-emitter voltage and 800 A collector current. It has an input capacitance (Cies) of 57 nF at 25 V. The module is designed for chassis mounting and operates across a temperature range of -40°C to 125°C. This component is suitable for demanding applications in industrial drives, power generation, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -40°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 800A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 1200 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 3900 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 57 nF @ 25 V |
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