FF600R17KE3B2NOSA1
IGBT MODULE 1700V 4300WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies FF600R17KE3B2NOSA1 is a high-performance IGBT module. This module features two independent IGBTs, each rated for a collector-emitter breakdown voltage of 1700 V and a maximum power dissipation of 4300 W. The collector current at Vce saturation is 600 A, with a typical Vce(on) of 2.45 V at 15 V gate-emitter voltage. Input capacitance (Cies) is 54 nF at 25 V. Designed for demanding industrial applications, this chassis-mount module operates across a temperature range of -40°C to 125°C. It is supplied in tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | 2 Independent |
| Operating Temperature | -40°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 600A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Power - Max | 4300 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 54 nF @ 25 V |