FF50R12RT4HOSA1
IGBT MOD 1200V 50A 285WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies IGBT Module FF50R12RT4HOSA1 is a Trench Field Stop IGBT featuring a half-bridge configuration. This module is rated for a collector-emitter breakdown voltage of 1200V and a continuous collector current of 50A, with a maximum power dissipation of 285W. The on-state voltage (Vce(on)) is specified at 2.15V at 15V gate-emitter voltage and 50A collector current. Input capacitance (Cies) is 2.8 nF at 25V. Designed for chassis mounting, this component operates within a temperature range of -40°C to 150°C (TJ). The FF50R12RT4HOSA1 is suitable for applications in industrial automation, renewable energy systems, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 50A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 285 W |
| Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 2.8 nF @ 25 V |
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