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FF400R33KF2CB3NOSA1

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FF400R33KF2CB3NOSA1

IGBT MOD 3300V 660A AIHV130-3

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

The Infineon Technologies FF400R33KF2CB3NOSA1 is an IGBT module featuring two independent collector-emitter configurations. This component is rated for a maximum collector-emitter voltage of 3300 V and a continuous collector current of 660 A. Its maximum power dissipation is 4800 W, with a typical Vce(on) of 4.25V at 15V gate-emitter voltage and 400A collector current. The input capacitance (Cies) is specified at 50 nF at 25 V. This chassis-mount module operates within a temperature range of -40°C to 125°C and is supplied in the A-IHV130-3 package. It finds application in high-voltage industrial power systems, traction, and renewable energy conversion.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
Configuration2 Independent
Operating Temperature-40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic4.25V @ 15V, 400A
NTC ThermistorNo
Supplier Device PackageA-IHV130-3
IGBT Type-
Current - Collector (Ic) (Max)660 A
Voltage - Collector Emitter Breakdown (Max)3300 V
Power - Max4800 W
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce50 nF @ 25 V

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