FF400R12KT3EHOSA1
IGBT MOD 1200V 580A 2000WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies C Series IGBT Module FF400R12KT3EHOSA1 offers robust performance for demanding power applications. This module features two independent IGBTs, each rated for a 1200 V collector-emitter breakdown voltage. With a maximum collector current of 580 A and a power dissipation of 2000 W, it is well-suited for high-power switching. The module's Vce(on) is specified at 2.15V at 15V gate-emitter voltage and 400A collector current. Input capacitance (Cies) is 28 nF at 25V. Designed for chassis mounting, this module operates efficiently across a temperature range of -40°C to 125°C. It finds application in industrial automation, renewable energy systems, and electric vehicle powertrains.
Additional Information
Series: CRoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | 2 Independent |
| Operating Temperature | -40°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 400A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 580 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 2000 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 28 nF @ 25 V |
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