FF225R65T3E3P5BPMA1
IHV IHM T XHP 3 3-6 5K AG-XHP3K6Manufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies XHP™3 series IGBT module, part number FF225R65T3E3P5BPMA1, offers a robust solution for high-power applications. This power semiconductor features a Trench Field Stop IGBT structure, providing excellent switching performance. The module boasts a collector-emitter voltage breakdown of 5900 V and a continuous collector current rating of 225 A, with a maximum power dissipation of 1000 W. Its configuration includes two independent IGBTs, and it is designed for chassis mounting. The ON-state voltage (Vce(on)) is rated at a maximum of 3.4 V at 15 V gate-emitter voltage and 225 A collector current. The input capacitance (Cies) is 65.6 nF at 25 V. Operating temperature reaches up to 125°C (TJ). This component is typically utilized in industrial motor drives, power grid applications, and renewable energy systems. The supplier device package is AG-XHP3K65, supplied in trays.
Additional Information
Series: XHP™3RoHS Status: ROHS3 CompliantManufacturer Lead Time: 97 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | 2 Independent |
| Operating Temperature | 125°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 225A |
| NTC Thermistor | No |
| Supplier Device Package | AG-XHP3K65 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 225 A |
| Voltage - Collector Emitter Breakdown (Max) | 5900 V |
| Power - Max | 1000 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 65.6 nF @ 25 V |
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