FF225R65T3E3P4BPMA1
IHV IHM T XHP 3 3-6 5K AG-XHP3K6Manufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies presents the FF225R65T3E3P4BPMA1, an IGBT module from the XHP™3 series. This Trench Field Stop IGBT features 2 independent configurations, designed for high-power applications. With a maximum collector current of 225 A and a collector saturation voltage (Vce(on)) of 3.4V at 15V gate-emitter voltage and 225A collector current, this module offers efficient power handling. The breakdown voltage between collector and emitter (Vce(max)) is rated at 5900 V. Its robust construction includes a Chassis Mount design and a low input capacitance (Cies) of 65.6 nF at 25 V. The module operates up to a junction temperature of 125°C and is supplied in Tray packaging. This component is suitable for demanding industrial applications requiring high voltage and current capabilities.
Additional Information
Series: XHP™3RoHS Status: ROHS3 CompliantManufacturer Lead Time: 97 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | 2 Independent |
| Operating Temperature | 125°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 225A |
| NTC Thermistor | No |
| Supplier Device Package | AG-XHP3K65 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 225 A |
| Voltage - Collector Emitter Breakdown (Max) | 5900 V |
| Power - Max | 1000 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 65.6 nF @ 25 V |
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