Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

FF225R12ME4B11BPSA1

Banner
productimage

FF225R12ME4B11BPSA1

IGBT MOD 1200V 320A 1050W

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies FF225R12ME4B11BPSA1 is a high-power IGBT module from the EconoDUAL™ 3 series. This Trench Field Stop IGBT module features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 320 A. It offers a robust 1050 W power capability and a low Vce(on) of 2.15V at 15V gate-emitter voltage and 225A collector current. The module is designed for chassis mounting and includes an integrated NTC thermistor for temperature monitoring. The 2 independent IGBT configuration and input capacitance of 13 nF @ 25 V make it suitable for applications in industrial automation, renewable energy systems, and electric vehicle powertrains. Operating temperature range is -40°C to 150°C.

Additional Information

Series: EconoDUAL™ 3RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
Configuration2 Independent
Operating Temperature-40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 225A
NTC ThermistorYes
Supplier Device PackageModule
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)320 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max1050 W
Current - Collector Cutoff (Max)3 mA
Input Capacitance (Cies) @ Vce13 nF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
FF225R12ME4BOSA1

IGBT MOD 1200V 320A 1050W

product image
FF450R07ME4BOSA1

GBT MODULE 650V 450A

product image
FF300R07ME4BOSA1

GBT MODULE 650V 300A