FF200R33KF2CNOSA1
IGBT MOD 3300V 330A 2200WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies IGBT Module FF200R33KF2CNOSA1 is a high-power semiconductor device featuring two independent IGBTs. This module is rated for a maximum collector-emitter voltage of 3300 V and a continuous collector current of 330 A, with a maximum power dissipation of 2200 W. The module's on-state voltage drop (Vce(on)) is specified at 4.25 V at 15 V gate-emitter voltage and 200 A collector current. Input capacitance (Cies) is 25 nF at 25 V. Designed for chassis mounting, this component operates within an ambient temperature range of -40°C to 125°C. It is suitable for demanding applications in industrial motor control, renewable energy systems, and high-voltage power conversion.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | 2 Independent |
| Operating Temperature | -40°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 4.25V @ 15V, 200A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 330 A |
| Voltage - Collector Emitter Breakdown (Max) | 3300 V |
| Power - Max | 2200 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 25 nF @ 25 V |