FF200R12KT3EHOSA1
IGBT MODULE 1200V 1050WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies C Series IGBT Module, part number FF200R12KT3EHOSA1, offers a robust solution for high-power applications. This chassis mount module features two independent IGBTs, each rated for 1200 V with a maximum power output of 1050 W. The module exhibits a Vce(on) of 2.15V at 15V Vge and 200A Ic, with a collector cutoff current of 5 mA at the maximum rated voltage. It is designed for operation across a wide temperature range of -40°C to 125°C. The input capacitance (Cies) is specified at 14 nF at 25 V. This component is commonly utilized in industrial power conversion, motor drives, and renewable energy systems.
Additional Information
Series: CRoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | 2 Independent |
| Operating Temperature | -40°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 200A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 1050 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 14 nF @ 25 V |