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FF1200R17KE3NOSA1

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FF1200R17KE3NOSA1

IGBT MODULE VCES 1700V 1200A

Manufacturer: Infineon Technologies

Categories: IGBT Modules

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Infineon Technologies FF1200R17KE3NOSA1 is an IGBT Module featuring a Single Chopper configuration. This module is designed for high-power applications with a Collector-Emitter Voltage (VCES) of 1700 V and a continuous Collector Current (IC) of 1200 A. The maximum power dissipation is rated at 595000 W. It exhibits a typical VCE(on) of 2.45V at 15V gate drive and 1200A collector current. Input capacitance (Cies) is 110 nF at 25V. The module is chassis mountable for effective thermal management and operates across a temperature range of -40°C to 125°C. This component is suitable for demanding industrial applications including power supplies, motor drives, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Not For New DesignsPackaging: Tray
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle Chopper
Operating Temperature-40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 1200A
NTC ThermistorNo
Supplier Device PackageModule
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1700 V
Power - Max595000 W
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce110 nF @ 25 V

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