FF1200R17KE3B2NOSA1
IGBT MODULE 1700V 1200AManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies FF1200R17KE3B2NOSA1 is a high-power IGBT module from the IHM-B series. This chassis-mount component offers a robust 1700V collector-emitter breakdown voltage and a substantial 1700A continuous collector current. Designed for demanding applications, it features a maximum power dissipation of 6600W. The module utilizes two independent IGBTs, each with a typical Vce(on) of 2.45V at 15V gate-emitter voltage and 1.2kA collector current. Input capacitance (Cies) is specified at 110 nF at 25V. Operating temperature ranges from -40°C to 125°C (TJ). This device is commonly employed in industrial motor drives, power converters, and renewable energy systems. The supplier device package is A-IHV130-3.
Additional Information
Series: IHM-BRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | 2 Independent |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 1.2kA |
| NTC Thermistor | No |
| Supplier Device Package | A-IHV130-3 |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 1700 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Power - Max | 6600 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 110 nF @ 25 V |
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