FF1200R12KE3NOSA1
IGBT MODULE 1200V 5000WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies IGBT Module FF1200R12KE3NOSA1 is a robust power semiconductor solution designed for demanding applications. This module features a 1200 V collector-emitter breakdown voltage and a 5000 W maximum power dissipation, making it suitable for high-power industrial motor drives, renewable energy systems, and electric vehicle powertrains. The FF1200R12KE3NOSA1 offers a 2 Independent configuration with a Vce(on) of 2.15V at 15V Vge and 1200A Ic, ensuring efficient power switching. It includes an input capacitance of 86 nF @ 25 V. The module is chassis mountable for effective thermal management and operates across a temperature range of -40°C to 125°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | 2 Independent |
| Operating Temperature | -40°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 1200A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 5000 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 86 nF @ 25 V |
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