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FF100R12RT4HOSA1

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FF100R12RT4HOSA1

IGBT MOD 1200V 100A 555W

Manufacturer: Infineon Technologies

Categories: IGBT Modules

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Infineon Technologies FF100R12RT4HOSA1 is a Trench Field Stop IGBT Module designed for high-power applications. This module features two independent IGBTs, each capable of handling 1200 V collector-emitter breakdown voltage and 100 A continuous collector current. The maximum power dissipation is 555 W. With a low on-state voltage of 2.15V at 15V gate-emitter voltage and 100A collector current, it ensures efficient power switching. The input capacitance (Cies) is 630 nF at 25V. This chassis mount module operates reliably within a temperature range of -40°C to 150°C. It utilizes a standard input for control signals. This component is commonly found in industrial motor drives, renewable energy systems, and power supply applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
Configuration2 Independent
Operating Temperature-40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 100A
NTC ThermistorNo
Supplier Device PackageModule
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)100 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max555 W
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce630 nF @ 25 V

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