Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

F475R12KS4BOSA1

Banner
productimage

F475R12KS4BOSA1

IGBT MOD 1200V 100A 500W

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies F475R12KS4BOSA1 is a robust IGBT module featuring a three-phase inverter configuration. This module delivers a 1200V collector-emitter breakdown voltage and a maximum collector current of 100A, with a power dissipation capability of 500W. It is designed for chassis mounting, facilitating efficient thermal management in demanding applications. The device includes an integrated NTC thermistor for temperature monitoring and exhibits a typical input capacitance (Cies) of 5.1 nF at 25V. The on-state voltage (Vce(on)) is specified at a maximum of 3.75V under 15V gate voltage and 75A collector current conditions. Operating within a temperature range of -40°C to 125°C, this component is suitable for use in industrial automation, renewable energy systems, and electric vehicle powertrains.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationThree Phase Inverter
Operating Temperature-40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic3.75V @ 15V, 75A
NTC ThermistorYes
Supplier Device PackageModule
IGBT Type-
Current - Collector (Ic) (Max)100 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max500 W
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce5.1 nF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
FD300R12KE3HOSA1

IGBT MOD 1200V 480A 1470W

product image
F4150R17N3P4B58BPSA1

LOW POWER ECONO AG-ECONO3B-411

product image
FF3MR20KM1HHPSA1

MEDIUM POWER 62MM