DF650R17IE4BOSA1
IGBT MOD 1700V 930A 4150WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies' PrimePACK™2 IGBT Module, part number DF650R17IE4BOSA1, is engineered for high-power applications. This single-configuration module offers a robust 1700 V collector-emitter breakdown voltage and a maximum collector current of 930 A at a 25 V gate-emitter voltage. It features a low on-state voltage of 2.45 V at 650 A collector current. The module dissipates a maximum power of 4150 W and is designed for chassis mounting. Key electrical parameters include an input capacitance (Cies) of 54 nF at 25 V and a collector cutoff current of 5 mA. An integrated NTC thermistor facilitates temperature monitoring. Operating across a wide temperature range of -40°C to 150°C, this module is suitable for demanding industrial sectors like renewable energy generation, electric motor drives, and industrial power supplies. The component is supplied in bulk packaging.
Additional Information
Series: PrimePACK™2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -40°C ~ 150°C |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 650A |
| NTC Thermistor | Yes |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 930 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Power - Max | 4150 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 54 nF @ 25 V |
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