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DF150R12RT4HOSA1

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DF150R12RT4HOSA1

IGBT MOD 1200V 150A 790W

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies DF150R12RT4HOSA1 is a Trench Field Stop IGBT module featuring a single chopper configuration. This component is rated for 1200 V collector-emitter breakdown voltage and a continuous collector current of 150 A. The module offers a maximum power dissipation of 790 W and exhibits a Vce(on) of 2.15 V at 15 V gate-emitter voltage and 150 A collector current. Input capacitance (Cies) is specified at 9.3 nF at 25 V. Designed for chassis mounting, this module operates within an extended temperature range of -40°C to 150°C. It finds application in power conversion systems for industrial automation, renewable energy, and electric vehicle powertrains.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle Chopper
Operating Temperature-40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 150A
NTC ThermistorNo
Supplier Device PackageModule
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)150 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max790 W
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce9.3 nF @ 25 V

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