BSM75GD120DN2BOSA1
IGBT MOD 1200V 103A 520WManufacturer: Infineon Technologies
Categories: IGBT Modules
Quality Control: Learn More
Infineon Technologies BSM75GD120DN2BOSA1 is a three-phase inverter IGBT module designed for high-power applications. This chassis mount module offers a robust 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 103 A. The module features a maximum power dissipation of 520 W and a low Vce(on) of 3 V at 15 V gate-emitter voltage and 75 A collector current. With an input capacitance (Cies) of 5.1 nF at 25 V and an operating junction temperature of up to 150°C, it is well-suited for demanding power conversion tasks. This component finds application in industrial automation, renewable energy systems, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Three Phase Inverter |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 75A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 103 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 520 W |
| Current - Collector Cutoff (Max) | 1.5 mA |
| Input Capacitance (Cies) @ Vce | 5.1 nF @ 25 V |
Request a Quote
Clients Also Buy
BSM400GA170DLS
IGBT MODULE
F3L225R12W3H3B11BPSA1
IGBT MODULE
F43L50R07W2H3FB11BPSA2
IGBT MOD 650V 50A 20MW
