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BSM75GB60DLCHOSA1

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BSM75GB60DLCHOSA1

IGBT MOD 600V 100A 355W

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies BSM75GB60DLCHOSA1 is a robust IGBT module featuring a single configuration. This component is engineered for demanding applications, offering a 600V collector-emitter breakdown voltage and a maximum collector current of 100A. The module dissipates up to 355W of power and presents a typical on-state voltage of 2.45V at 15V gate-emitter voltage and 75A collector current. Input capacitance (Cies) is specified at 3.3 nF at 25V. Designed for chassis mounting, this module operates reliably within a temperature range of -40°C to 125°C. Its high power density and robust construction make it suitable for use in industrial power systems, motor drives, and renewable energy applications. The device is supplied in bulk packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 75A
NTC ThermistorNo
Supplier Device PackageModule
IGBT Type-
Current - Collector (Ic) (Max)100 A
Voltage - Collector Emitter Breakdown (Max)600 V
Power - Max355 W
Current - Collector Cutoff (Max)500 µA
Input Capacitance (Cies) @ Vce3.3 nF @ 25 V

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