BSM75GB170DN2HOSA1
IGBT MOD 1700V 110A 625WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM75GB170DN2HOSA1 is a Half Bridge IGBT Module designed for demanding power applications. This module features a 1700 V collector-emitter breakdown voltage and a continuous collector current rating of 110 A, with a maximum power dissipation of 625 W. The on-state voltage (Vce(on)) is specified at 3.9 V at 15 V gate-emitter voltage and 75 A collector current. Input capacitance (Cies) is 11 nF at 25 V. The BSM75GB170DN2HOSA1 is chassis mountable for robust thermal management and operates at junction temperatures up to 150°C. This component is commonly utilized in industrial motor drives, renewable energy systems, and high-voltage power conversion applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 75A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 110 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Power - Max | 625 W |
| Input Capacitance (Cies) @ Vce | 11 nF @ 25 V |
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