BSM75GB120DLCHOSA1
IGBT MOD 1200V 170A 690WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM75GB120DLCHOSA1 is a high-power Insulated Gate Bipolar Transistor (IGBT) module designed for demanding industrial applications. This chassis-mount component features two independent IGBTs, each capable of handling 1200 V with a maximum collector current of 170 A. With a power dissipation rating of 690 W and a low collector-emitter saturation voltage (Vce(on)) of 2.6 V at 15 V gate-emitter voltage and 75 A collector current, it offers excellent efficiency. The module has an input capacitance (Cies) of 5.1 nF at 25 V and operates across a temperature range of -40°C to 125°C. It is typically employed in motor drives, power supplies, and renewable energy systems where robust power switching is essential.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | 2 Independent |
| Operating Temperature | -40°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 75A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 170 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 690 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 5.1 nF @ 25 V |
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