BSM75GAR120DN2HOSA1
IGBT MOD 1200V 30A 235WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM75GAR120DN2HOSA1 is a single IGBT module featuring Trench Field Stop technology. This component is rated for a collector-emitter breakdown voltage of 1200 V and offers a continuous collector current (Ic) of 30 A. The module has a maximum power dissipation of 235 W and a low on-state voltage (Vce(on)) of 2.2 V at 15 V gate-emitter voltage and 15 A collector current. Input capacitance (Cies) is specified at 1 nF at 25 V. The operating temperature range is -40°C to 175°C (TJ). This chassis mount module is suitable for industrial applications requiring robust power switching capabilities.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 15A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 235 W |
| Current - Collector Cutoff (Max) | 400 µA |
| Input Capacitance (Cies) @ Vce | 1 nF @ 25 V |
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