BSM75GAL120DN2HOSA1
IGBT MOD 1200V 105A 625WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM75GAL120DN2HOSA1 is a single IGBT module designed for high-voltage, high-power applications. This chassis mount module features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 105A. The module offers a maximum power dissipation of 625W and a low on-state voltage of 3V at 15V gate-emitter voltage and 75A collector current. Input capacitance (Cies) is rated at 5.5 nF at 25V. The operating temperature range extends to 150°C (TJ). This component is commonly employed in industrial drives, electric vehicle powertrains, and renewable energy systems. The BSM75GAL120DN2HOSA1 is supplied in tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single Switch |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 75A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 105 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 625 W |
| Current - Collector Cutoff (Max) | 1.4 mA |
| Input Capacitance (Cies) @ Vce | 5.5 nF @ 25 V |
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