BSM50GP120BOSA1
IGBT MODULE 1200V 50AManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM50GP120BOSA1 is a high-performance IGBT module designed for robust power switching applications. This 3-phase inverter configuration features a 1200V collector-emitter breakdown voltage and a maximum collector current of 80A. The module incorporates an NTC thermistor for thermal monitoring and is suitable for chassis mounting. Key electrical characteristics include a Vce(on) of 2.55V at 15V Vge and 50A Ic, and a collector cutoff current of 500 µA. Input capacitance (Cies) at 25V is 3.3 pF. Operating across a temperature range of -40°C to 125°C, this Infineon Technologies IGBT module is utilized in industrial automation, renewable energy systems, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Three Phase Bridge Rectifier |
| Configuration | 3 Phase Inverter |
| Operating Temperature | -40°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 2.55V @ 15V, 50A |
| NTC Thermistor | Yes |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Cutoff (Max) | 500 µA |
| Input Capacitance (Cies) @ Vce | 3.3 pF @ 25 V |
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