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BSM50GD120DN2G

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BSM50GD120DN2G

IGBT MOD 1200V 78A 400W

Manufacturer: Infineon Technologies

Categories: IGBT Modules

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Infineon Technologies BSM50GD120DN2G is a high-performance IGBT module featuring a full bridge configuration. This module is rated for a collector-emitter voltage of 1200V and a continuous collector current of 78A, with a maximum power dissipation of 400W. The Vce(on) is specified at 3.7V maximum at 15V gate-emitter voltage and 50A collector current. Input capacitance (Cies) is 33 nF at 25V. Designed for demanding applications, this chassis mount module operates across a junction temperature range of 150°C. It is commonly utilized in industrial motor drives, renewable energy systems, and power factor correction circuits. The module is supplied in bulk packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationFull Bridge
Operating Temperature150°C (TJ)
Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 50A
NTC ThermistorNo
Supplier Device PackageModule
IGBT Type-
Current - Collector (Ic) (Max)78 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max400 W
Input Capacitance (Cies) @ Vce33 nF @ 25 V

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