BSM50GD120DN2BOSA1
IGBT MOD 1200V 72A 350WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM50GD120DN2BOSA1 is a high-performance IGBT module featuring a full bridge configuration. This chassis mount module is rated for a maximum collector-emitter voltage of 1200 V and a continuous collector current of 72 A. It offers a maximum power dissipation of 350 W and a typical Vce(on) of 3V at 15V gate-emitter voltage and 50A collector current. Input capacitance (Cies) is 3.3 nF at 25V. The module operates at junction temperatures up to 150°C and is supplied in tray packaging. This component is suitable for applications in industrial automation, electric vehicle powertrains, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Full Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 50A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 72 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 350 W |
| Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 3.3 nF @ 25 V |
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