BSM50GD120DLCBPSA1
LOW POWER ECONO AG-ECONO2A-211Manufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM50GD120DLCBPSA1 is a robust IGBT module featuring a full bridge inverter configuration. This component is designed for high-voltage applications with a maximum collector-emitter breakdown voltage of 1200 V. It offers a continuous collector current capability of 85 A and a maximum power dissipation of 350 W. The module utilizes an AG-ECONO2A package for efficient chassis mounting. Key electrical characteristics include a typical Vce(on) of 2.6V at 15V Vge and 50A Ic, and a low collector cutoff current of 84 µA. The input capacitance (Cies) is 3.3 nF at 25 V. This Infineon Technologies IGBT module is suitable for demanding power electronics applications across various industrial sectors, including industrial automation and renewable energy systems. It operates reliably at junction temperatures up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Full Bridge Inverter |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 50A |
| NTC Thermistor | No |
| Supplier Device Package | AG-ECONO2A |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 85 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 350 W |
| Current - Collector Cutoff (Max) | 84 µA |
| Input Capacitance (Cies) @ Vce | 3.3 nF @ 25 V |
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