BSM50GB170DN2HOSA1
IGBT MOD 1700V 72A 500WManufacturer: Infineon Technologies
Categories: IGBT Modules
Quality Control: Learn More
Infineon Technologies BSM50GB170DN2HOSA1 is a robust IGBT module designed for high-power applications. This half-bridge configuration module features a 1700 V collector-emitter breakdown voltage and a continuous collector current rating of 72 A, with a maximum power dissipation of 500 W. The device exhibits a typical Vce(on) of 3.9 V at 15 V gate-emitter voltage and 50 A collector current, and an input capacitance (Cies) of 8 nF at 25 V. Optimized for chassis mounting, this module operates efficiently across a wide temperature range up to 150°C (TJ). It is a suitable component for demanding applications in industries such as industrial motor drives, renewable energy systems, and power grid infrastructure. The module is supplied in Tray packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 50A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 72 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Power - Max | 500 W |
| Input Capacitance (Cies) @ Vce | 8 nF @ 25 V |
Request a Quote
Clients Also Buy
BSM75GB60DLCHOSA1
IGBT MOD 600V 100A 355W
FD300R17KE4PHOSA1
IGBT MODULE 1700V 300A AG62MM-1
FF5MR20KM1HPHPSA1
MEDIUM POWER 62MM
