BSM50GB120DLCHOSA1
IGBT MOD 1200V 115A 460WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM50GB120DLCHOSA1 is a Half Bridge IGBT Module designed for demanding applications. This module features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 115 A, with a significant 460 W power dissipation capability. The device exhibits a typical Vce(on) of 2.6 V at 15 V gate-emitter voltage and 50 A collector current. It includes a standard input and a Cies input capacitance of 3.3 nF at 25 V. The BSM50GB120DLCHOSA1 is chassis mountable, facilitating robust thermal management. Operating across a temperature range of -40°C to 125°C, this module is suitable for power conversion systems in industrial automation, renewable energy, and electric vehicle drivetrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 50A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 115 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 460 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 3.3 nF @ 25 V |
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